Usoro njikọ anụ ahụ nke zinc selenide gụnyere tumadi ụzọ teknụzụ ndị a na paramita zuru ezu

Akụkọ

Usoro njikọ anụ ahụ nke zinc selenide gụnyere tumadi ụzọ teknụzụ ndị a na paramita zuru ezu

1. Solvothermal njikọ

1. Rawihe ruru;
A na-agwakọta ntụ ntụ Zinc na ntụ ntụ selenium na 1: 1 molar ratio, na mmiri deionized ma ọ bụ ethylene glycol na-agbakwunyere dị ka ihe mgbaze 35..

2 .Ọnọdụ mmeghachi omume

o okpomọkụ mmeghachi omume: 180-220°C

o Oge mmeghachi omume: awa 12-24

o Nrụgide: Jikwaa nrụgide na-emepụta onwe gị n'ime ketul mmeghachi omume mechiri emechi
Ngwakọta zinc na selenium na-eme ka ọ dị mfe site na kpo oku iji mepụta kristal nanoscale zinc selenide 35..

3.Usoro ọgwụgwọ mgbe emechara;
Mgbe mmeghachi omume ahụ gasịrị, a na-etinye ya na sentrifu, jiri amonia dilute (80 Celsius C), methanol, na oghere akpọnwụ (120 Celsius C, P₂O₅).nwetantụ ntụ> 99.9% ịdị ọcha 13.


2. Usoro ntinye mmiri mmiri kemịkalụ

1.Ngwọta ngwa ngwa ngwa ngwa

o Idị ọcha nke akụrụngwa zinc bụ ≥ 99.99% ma tinye ya n'ọkụ graphite.

o A na-ebufe gas hydrogen selenide site na argon gas na-ebu6.

2 .Njikwa okpomọkụ

o Mpaghara mkpofu Zinc: 850-900°C

o Mpaghara nkwụnye ego: 450-500C
Ntinye ntụzịaka nke vapor zinc na hydrogen selenide site na gradient okpomọkụ 6.

3 .Ngwakọta gas

o Argon eruba: 5-10 L/min

o Nrụgide akụkụ nke hydrogen selenide:0.1-0.3 elekere
Ọnụ ego nkwụnye ego nwere ike iru 0.5-1.2 mm / h, na-eme ka e guzobe 60-100 mm nnukwu polycrystalline zinc selenide 6..


3. Usoro njikọ aka siri ike

1. Rawejizi ihe;
A na-emeghachi ihe ngwọta zinc chloride na ngwọta oxalic acid iji mepụta zinc oxalate precipitate, nke a mịrị amị na ala ma gwakọta ya na ntụ ntụ selenium na nha 1: 1.05 molar 4..

2 .Oke mmeghachi omume okpomọkụ

o Vacuum tube ọkụ ọkụ: 600-650°C

o Debe oge okpomọkụ: awa 4-6
Zinc selenide ntụ ntụ nwere urughuru nha nke 2-10 μm na-emepụta site na mmeghachi omume mgbasa ozi siri ike..


Ntụle nke isi usoro

usoro

Topography nke ngwaahịa

Nha urughuru/ọkpụrụkpụ

Crystallinity

Ubi nke ngwa

Usoro Solvothermal 35

Nanoballs / mkpara

20-100 nm

Cubic sphalerite

Ngwa ngwa optoelectronic

Ntube ikuku 6

Ihe mgbochi polycrystalline

60-100 mm

Ọdịdị hexagonal

Infrared optics

Usoro siri ike 4

ntụ ntụ nke nwere obere micron

2-10 μm

Usoro cubic

Ihe mmalite ihe infrared

Isi ihe dị mkpa nke njikwa usoro pụrụ iche: usoro solvothermal kwesịrị ịgbakwunye surfactants dị ka oleic acid iji na-ahazi morphology 5, na ntinye ikuku na-achọ ka ike mkpụrụ dị ka .

 

 

 

 

 

1. Ntụnye uzuoku nke anụ ahụ (PVD).

1 .Ụzọ teknụzụ

o Zinc selenide akụrụngwa bụ vaporized na oghere gburugburu ebe na-edebe n'elu mkpụrụ n'elu site na iji sputtering ma ọ bụ thermal evaporation technology12.

o A na-ekpo ọkụ na isi iyi nke zinc na selenium na gradients dị iche iche nke okpomọkụ (mpaghara evaporation zinc: 800-850 ° C, mpaghara evaporation selenium: 450-500 Celsius C), na stoichiometric ratio na-achịkwa site na ịchịkwa ọnụego evaporation.;12.

2 .Njikwa oke

o Vacuum: ≤1×10⁻³ Pa

o Ọnọdụ okpomọkụ: 200-400°C

o Ọnụ ego nkwụnye ego:0.2–1.0 nm/s
Zinc selenide fim nwere ọkpụrụkpụ nke 50-500 nm nwere ike kwadebere maka ojiji na infrared optics 25.


2. Usoro egwe ọka bọọlụ

1.Ijikwa ihe akụrụngwa

o Zinc ntụ ntụ (dị ọcha≥99.9%) na-agwakọta ya na selenium ntụ ntụ na 1:1 molar ratio na kwajuru n'ime igwe anaghị agba nchara igwe igwe igwe 23.

2 .Usoro usoro

o Oge ịgba bọọlụ: awa 10–20

Ọsọ ọsọ: 300-500 rpm

Oke Pellet: 10: 1 (bọọlụ na-egweri zirconia).
Ndị na-emepụta zinc selenide nanoparticles nwere oke nha nke 50-200 nm sitere na mmeghachi omume alloying, yana ịdị ọcha nke> 99% 23..


3. Usoro sintering na-ekpo ọkụ

1 .Precursor nkwadebe

Zinc selenide nanopowder (ihe nha <100 nm) nke ejiri usoro solvothermal mebere dị ka akụrụngwa 4.

2 .paramita na-emekọ ihe

o Okpomọkụ: 800-1000C

o Nrụgide: 30–50 MPa

o Na-ekpo ọkụ: 2-4 awa
Ngwaahịa a nwere njupụta nke> 98% na enwere ike hazie ya ka ọ bụrụ nnukwu ngwa ngwa anya dị ka windo infrared ma ọ bụ lenses 45..


4. Epitaxy molecular beam (MBE).

1.Ebe oghere oghere dị elu

o Vacuum: ≤1×10⁻ Pa

o The zinc na selenium molekụla ibé chịkwaa kpomkwem na-erufe site na eletrọn beam evaporation source6.

2.Usoro uto

o Ọnọdụ okpomọkụ: 300-500 ° C (GaAs ma ọ bụ sapphire substrates na-ejikarị eme ihe).

o Ọnụego uto:0.1–0.5 nm/s
Enwere ike ịkwadebe ihe nkiri dị mkpa nke zinc selenide nke otu kristal na oke nha nke 0.1-5 μm maka ngwaọrụ optoelectronic dị elu56.

 


Oge nzipu: Eprel-23-2025